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Gallium Nitride vs Silicon in Soft Switching

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Manage episode 381025075 series 2971137
Contenuto fornito da Würth Elektronik and WE Team. Tutti i contenuti dei podcast, inclusi episodi, grafica e descrizioni dei podcast, vengono caricati e forniti direttamente da Würth Elektronik and WE Team o dal partner della piattaforma podcast. Se ritieni che qualcuno stia utilizzando la tua opera protetta da copyright senza la tua autorizzazione, puoi seguire la procedura descritta qui https://it.player.fm/legal.

Gallium Nitride (GaN) is a wide bandgap compound semiconductor formed by the combination of Gallium and Nitrogen with an atomic structure of quartzite crystal. In contrast to Silicon Carbide (SiC) power devices that have been around for quite a while, GaN power devices have just started to appear on the market. In this episode, we are taking a look at a comparative study between Gallium Nitride vs. Silicon in soft switching. Silicon and GaN-based devices are compared on different factors and tested with different switching frequencies to explore the best uses for each technology. This episode is based on a white paper created in collaboration with Würth Elektronik and STMicroelectronics, and first shared on All About Circuits.

Visit Wurth Elektronik online- www.we-online.com

Visit STMicro online- www.stmicro.com

Visit All About Circuits online- https://www.allaboutcircuits.com/partner-content-hub/wuerth-elektronik-eisos-gmbh-co-kg/gan-vs-silicon-in-soft-switching-a-comparative-study/

  continue reading

101 episodi

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iconCondividi
 
Manage episode 381025075 series 2971137
Contenuto fornito da Würth Elektronik and WE Team. Tutti i contenuti dei podcast, inclusi episodi, grafica e descrizioni dei podcast, vengono caricati e forniti direttamente da Würth Elektronik and WE Team o dal partner della piattaforma podcast. Se ritieni che qualcuno stia utilizzando la tua opera protetta da copyright senza la tua autorizzazione, puoi seguire la procedura descritta qui https://it.player.fm/legal.

Gallium Nitride (GaN) is a wide bandgap compound semiconductor formed by the combination of Gallium and Nitrogen with an atomic structure of quartzite crystal. In contrast to Silicon Carbide (SiC) power devices that have been around for quite a while, GaN power devices have just started to appear on the market. In this episode, we are taking a look at a comparative study between Gallium Nitride vs. Silicon in soft switching. Silicon and GaN-based devices are compared on different factors and tested with different switching frequencies to explore the best uses for each technology. This episode is based on a white paper created in collaboration with Würth Elektronik and STMicroelectronics, and first shared on All About Circuits.

Visit Wurth Elektronik online- www.we-online.com

Visit STMicro online- www.stmicro.com

Visit All About Circuits online- https://www.allaboutcircuits.com/partner-content-hub/wuerth-elektronik-eisos-gmbh-co-kg/gan-vs-silicon-in-soft-switching-a-comparative-study/

  continue reading

101 episodi

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